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onsemi MJE15033 BJTs

Bipolar Transistor, PNP, 250 V, 8.0 A, TO-220 3 LEAD STANDARD, 50-TUBE

50onsemiTO-220-3$0.67
MJE15033 - No Image Available

Same model may have multiple batches, images only for reference.

MJE15033
Manufacturer
Part Number (MPN)
MJE15033
Detailed Description
Bipolar Transistor, PNP, 250 V, 8.0 A, TO-220 3 LEAD STANDARD, 50-TUBE
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
PDF MJE15033 Datasheet
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Technical Specifications

onsemi MJE15033 BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
10 @ 2A, 5V
Power Max
50 W
Frequency Transition
30MHz
Transistor Type
PNP
Current Collector IC Max
8 A
Voltage Collector Emitter Breakdown Max
250 V

Alternate Parts Comparison (MJE15033 vs MJE15030G vs MJE15032G vs MJE15034G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Collector Cutoff Max10µA (ICBO)100µA10µA (ICBO)10µA (ICBO)
Current Collector IC Max8 A8 A8 A4 A
Dc Current Gain Hfe Min IC Vce10 @ 2A, 5V20 @ 4A, 2V10 @ 2A, 5V10 @ 2A, 5V
Frequency Transition30MHz30MHz30MHz30MHz
Power Max50 W50 W50 W2 W
Transistor TypePNPNPNNPNNPN
Vce Saturation Max Ib IC500mV @ 100mA, 1A500mV @ 100mA, 1A500mV @ 100mA, 1A500mV @ 100mA, 1A
Voltage Collector Emitter Breakdown Max250 V150 V250 V350 V
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