onsemi MJE15030 BJTs
Bipolar Transistor, NPN, 150 V, 8.0 A, TO-220 3 LEAD STANDARD, 50-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJE15030
Detailed Description
Bipolar Transistor, NPN, 150 V, 8.0 A, TO-220 3 LEAD STANDARD, 50-TUBE
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
MJE15030 Datasheet
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Technical Specifications
onsemi MJE15030 BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
20 @ 4A, 2V
Power Max
50 W
Frequency Transition
30MHz
Transistor Type
NPN
Current Collector IC Max
8 A
Voltage Collector Emitter Breakdown Max
150 V
Alternate Parts Comparison (MJE15030 vs MJE15030G vs MJE15032G vs MJE15034G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Collector Cutoff Max | 100µA | 100µA | 10µA (ICBO) | 10µA (ICBO) |
| Current Collector IC Max | 8 A | 8 A | 8 A | 4 A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 4A, 2V | 20 @ 4A, 2V | 10 @ 2A, 5V | 10 @ 2A, 5V |
| Frequency Transition | 30MHz | 30MHz | 30MHz | 30MHz |
| Power Max | 50 W | 50 W | 50 W | 2 W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Vce Saturation Max Ib IC | 500mV @ 100mA, 1A | 500mV @ 100mA, 1A | 500mV @ 100mA, 1A | 500mV @ 100mA, 1A |
| Voltage Collector Emitter Breakdown Max | 150 V | 150 V | 250 V | 350 V |
| Action |
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