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onsemi MJD112-1G BJTs

NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251

46 ActiveonsemiTO-251-3 Short Leads, IPAK, TO-251AA$2.33
MJD112-1G TO-251-3 Short Leads, IPAK, TO-251AA package illustration

Same model may have multiple batches, images only for reference.

MJD112-1G
Manufacturer
Part Number (MPN)
MJD112-1G
Detailed Description
NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Lifecycle Status
Active
Datasheet
PDF MJD112-1G Datasheet
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Technical Specifications

onsemi MJD112-1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
1000 @ 2A, 3V
Power Max
1.75 W
Frequency Transition
25MHz
Transistor Type
NPN - Darlington
Current Collector IC Max
2 A

Related Parts Comparison (MJD112-1G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveProductionActiveActive
Current Collector Cutoff Max20µA50µA20µA (ICBO)100nA (ICBO)
Current Collector IC Max2 A10 A4 A5 A
Dc Current Gain Hfe Min IC Vce1000 @ 2A, 3V20 @ 4A, 4V85 @ 500mA, 1V45 @ 2A, 1V
Power Max1.75 W1.75 W1.75 W1.4 W
Transistor TypeNPN - DarlingtonNPNNPNPNP
Vce Saturation Max Ib IC3V @ 40mA, 4A8V @ 3.3A, 10A500mV @ 200mA, 2A1.8V @ 1A, 5A
Voltage Collector Emitter Breakdown Max100 V60 V45 V25 V
RoHSYesCompliantYes--
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