onsemi MJD112-1G BJTs
NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD112-1G
Detailed Description
NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Lifecycle Status
Active
Datasheet
MJD112-1G Datasheet
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Technical Specifications
onsemi MJD112-1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
1000 @ 2A, 3V
Power Max
1.75 W
Frequency Transition
25MHz
Transistor Type
NPN - Darlington
Current Collector IC Max
2 A
Alternate Parts Comparison (MJD112-1G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 20µA | 50µA | 20µA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 2 A | 10 A | 4 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 1000 @ 2A, 3V | 20 @ 4A, 4V | 85 @ 500mA, 1V | 45 @ 2A, 1V |
| Power Max | 1.75 W | 1.75 W | 1.75 W | 1.4 W |
| Transistor Type | NPN - Darlington | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 3V @ 40mA, 4A | 8V @ 3.3A, 10A | 500mV @ 200mA, 2A | 1.8V @ 1A, 5A |
| Voltage Collector Emitter Breakdown Max | 100 V | 60 V | 45 V | 25 V |
| RoHS | Yes | Compliant | Yes | -- |
| Action |
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