onsemi MJD45H11-1G BJTs
8 A, 80 V PNP Power Bipolar Junction Transistor, DPAK INSERTION MOUNT, 75-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD45H11-1G
Base Model
Detailed Description
8 A, 80 V PNP Power Bipolar Junction Transistor, DPAK INSERTION MOUNT, 75-TUBE
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Lifecycle Status
Active
Datasheet
MJD45H11-1G Datasheet
Quick Jump:
Technical Specifications
onsemi MJD45H11-1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 4A, 1V
Power Max
1.75 W
Frequency Transition
90MHz
Transistor Type
PNP
Current Collector IC Max
8 A
Alternate Parts Comparison (MJD45H11-1G vs MJD45H11T4G vs MJD45H11G vs MJD45H11RLG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 1µA | 1µA | 1µA | 1µA |
| Current Collector IC Max | 8 A | 8 A | 8 A | 8 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 4A, 1V | 40 @ 4A, 1V | 40 @ 4A, 1V | 40 @ 4A, 1V |
| Frequency Transition | 90MHz | 90MHz | 90MHz | 90MHz |
| Package | TO-251 | DPAK-3 | DPAK-3 | TO-252-3,DPAK(2Leads+Tab),SC-63 |
| Power Max | 1.75 W | 1.75 W | 1.75 W | 1.75 W |
| Transistor Type | PNP | PNP | PNP | PNP |
| Action |
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