onsemi KSC1730YTA RF BJT
RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSC1730YTA
Detailed Description
RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Obsolete
Datasheet
KSC1730YTA Datasheet
Quick Jump:
Technical Specifications
onsemi KSC1730YTA RF BJT technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
120 @ 5mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
1.1GHz
Alternate Parts Comparison (KSC1730YTA vs KSC2383YTA vs KSC1008CYTA vs KSC2334YTU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 Long Body, Formed Leads | TO-226-3, TO-92-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| RoHS | Yes | Compliant | Yes | Yes |
| Lifecycle Status | Obsolete | Production | Active | Active |
| Current Collector IC Max | 50mA | 1 A | 700 mA | 7 A |
| Dc Current Gain Hfe Min IC Vce | 120 @ 5mA, 10V | 160 @ 200mA, 5V | 120 @ 50mA, 2V | 120 @ 3A, 5V |
| Package | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 | TO-92-3 | TO-220-3 |
| Power Max | 250mW | 900 mW | 800 mW | 1.5 W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 15V | 160 V | 60 V | 100 V |
| Case Outline | -- | 135AM | 135AR | 340AT |
| Action |
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