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onsemi KSC1730OTA RF BJT

RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3

In StockonsemiTO-226-3, TO-92-3 (TO-226AA) Formed Leads
KSC1730OTA - No Image Available

Same model may have multiple batches, images only for reference.

KSC1730OTA
Manufacturer
Part Number (MPN)
KSC1730OTA
Detailed Description
RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Obsolete
Datasheet
PDF KSC1730OTA Datasheet
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Technical Specifications

onsemi KSC1730OTA RF BJT technical specifications.

General

Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
70 @ 5mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
1.1GHz
Power Max
250mW

Alternate Parts Comparison (KSC1730OTA vs KSC2383YTA vs KSC1008CYTA vs KSC2334YTU)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Number of Pins--3----
RoHS--Compliant----
Lifecycle StatusObsoleteActiveActiveActive
China ROHS--Compliant----
Collector Base Voltage Vcbo--160 V----
Collector Emitter Breakdown Voltage--160 V----
Collector Emitter Saturation Voltage--1.5 V----
Collector Emitter Voltage Vceo--160 V----
Current Rating--1 A----
Element Configuration--Single----
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