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onsemi 2N5550TA BJTs

NPN BJT Transistor, 140V VCEO, 600mA IC, 300MHz, TO-92

684,000 Activeonsemi2N5550TO-92$0.07
2N5550TA TO-92 package illustration

Same model may have multiple batches, images only for reference.

2N5550TA
Manufacturer
Part Number (MPN)
2N5550TA
Base Model
Detailed Description
NPN BJT Transistor, 140V VCEO, 600mA IC, 300MHz, TO-92
Package
TO-92
Lifecycle Status
Active
Datasheet
PDF 2N5550TA Datasheet
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Ordering Code Family

2N5550 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi 2N5550TA BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
60 @ 10mA, 5V
Power Max
625 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
600 mA

Alternate Parts Comparison (2N5550TA vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-36-TSSOP6-TSSOPTO-236-3, SC-59, SOT-23-3
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesCompliantCompliantCompliant
Lifecycle StatusActiveProductionProductionProduction
Case Outline135AR419B-02419B-02318-08
CompliancePbAHPPbAHPPbAHPPbAHP
Container Qty2000300030003000
Container TypeFNFLDREELREELREEL
Current Collector IC Max600 mA200mA100mA100 mA
Dc Current Gain Hfe Min IC Vce60 @ 10mA, 5V100 @ 10mA, 1V420 @ 2mA, 5V420 @ 2mA, 5V
Ft Min Mhz100250100100
Action

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