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onsemi BC556ABU BJTs

PNP BJT Transistor, 65V, 100mA, 150MHz, TO-92

900,000 ActiveonsemiTO-92$0.07
BC556ABU TO-92 package illustration

Same model may have multiple batches, images only for reference.

BC556ABU
Manufacturer
Part Number (MPN)
BC556ABU
Detailed Description
PNP BJT Transistor, 65V, 100mA, 150MHz, TO-92
Package
TO-92
Lifecycle Status
Active
Datasheet
PDF BC556ABU Datasheet
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Technical Specifications

onsemi BC556ABU BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
110 @ 2mA, 5V
Power Max
500 mW
Frequency Transition
150MHz
Transistor Type
PNP
Current Collector IC Max
100 mA

Alternate Parts Comparison (BC556ABU vs BC847CDW1T1G vs BC847CLT1G vs BC847ALT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-36-TSSOPTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesCompliantCompliantCompliant
Lifecycle StatusActiveProductionProductionProduction
Case Outline135AN419B-02318-08318-08
CompliancePbAHPPbAHPPbAHPPbAHP
Container Qty10000300030003000
Container TypeBLKBGREELREELREEL
Current Collector Cutoff Max15nA (ICBO)15nA (ICBO)15nA (ICBO)15nA (ICBO)
Current Collector IC Max100 mA100mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce110 @ 2mA, 5V420 @ 2mA, 5V420 @ 2mA, 5V110 @ 2mA, 5V
Action

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