onsemi BCP56-16T3G BJTs
80V 1A NPN BJT Transistor, 130MHz, SOT-223-4
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCP56-16T3G
Base Model
Detailed Description
80V 1A NPN BJT Transistor, 130MHz, SOT-223-4
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
BCP56-16T3G Datasheet
Quick Jump:
Technical Specifications
onsemi BCP56-16T3G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 2V
Power Max
1.5 W
Frequency Transition
130MHz
Transistor Type
NPN
Current Collector IC Max
1 A
Alternate Parts Comparison (BCP56-16T3G vs BCP56-16T1G vs BCP56-10T1G vs BCP5616MTWG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | 3-WDFN Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount, Wettable Flank |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 1 A | 1 A | 1 A |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 2V | 100 @ 150mA, 2V | 63 @ 150mA, 2V | 100 @ 150mA, 2V |
| Frequency Transition | 130MHz | 130MHz | 130MHz | 140MHz |
| Power Max | 1.5 W | 1.5 W | 1.5 W | 1.5 W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Vce Saturation Max Ib IC | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 80 V | 80 V |
| Action |
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