onsemi 2SC3649T-TD-E BJTs
Bipolar Transistor, 160V, 1.5A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200-400, SOT-89 / PCP-1, 1000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC3649T-TD-E
Base Model
Detailed Description
Bipolar Transistor, 160V, 1.5A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200-400, SOT-89 / PCP-1, 1000-REEL
Package
TO-243AA
Lifecycle Status
Active
Datasheet
2SC3649T-TD-E Datasheet
Quick Jump:
Technical Specifications
onsemi 2SC3649T-TD-E BJTs technical specifications.
General
Series
2SC3649
RoHS
Yes
Package / Case
TO-243AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 5V
Power Max
500 mW
Frequency Transition
120MHz
Transistor Type
NPN
Alternate Parts Comparison (2SC3649T-TD-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-243AA | 6-TSSOP | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Production | Production | Production |
| Collector Base Voltage Vcbo | 180 V | 40 V | 50 V | 50 V |
| Collector Emitter Saturation Voltage | 130 mV | -400 mV | 600 mV | 600 mV |
| Current Collector IC Max | 1.5 A | 200mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 100mA, 5V | 100 @ 10mA, 1V | 420 @ 2mA, 5V | 420 @ 2mA, 5V |
| Emitter Base Voltage Vebo | 6 V | 5 V | 6 V | 6 V |
| Package | SOT-89 | SOT-363-6 | SOT-363-6 | SOT-23-3 |
| Power Max | 500 mW | 150mW | 380mW | 300 mW |
| Action |
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