onsemi 2SA2013-TD-E BJTs

Name: 2SA2013-TD-E
Brand: onsemi
SKU: 2SA2013-TD-E
Price: 0.3647 USD
Availability: InStock

PNP BJT Transistor, -50V, -4A, 360MHz, SOT-89

632 ActiveonsemiTO-243AA$0.36

Same model may have multiple batches, images only for reference.

2SA2013-TD-E

Manufacturer

onsemi

Part Number (MPN)

2SA2013-TD-E

Technical Specifications

onsemi 2SA2013-TD-E BJTs technical specifications.

General

Package / Case

TO-243AA

Mounting Type

Surface Mount

Operating Temperature

150°C (TJ)

Lifecycle Status

Active

Dc Current Gain Hfe Min IC Vce

200 @ 500mA, 2V

Power Max

3.5 W

Frequency Transition

400MHz

Transistor Type

PNP

Current Collector IC Max

4 A

Voltage Collector Emitter Breakdown Max

50 V

Alternate Parts Comparison (2SA2013-TD-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemi2SA2013-TD-E	onsemiMBT3906DW1T1G	onsemiBC847CDW1T1G	onsemiBC847CLT1G
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Number of Pins	--	6	6	3
RoHS	--	Compliant	Compliant	Compliant
Lifecycle Status	Active	Active	Active	Active
China ROHS	--	Compliant	Compliant	Compliant
Collector Base Voltage Vcbo	--	40 V	50 V	50 V
Collector Emitter Breakdown Voltage	--	40 V	45 V	45 V
Collector Emitter Saturation Voltage	--	-400 mV	600 mV	600 mV
Collector Emitter Voltage Vceo	--	40 V	45 V	45 V
Contact Plating	--	Tin	Tin	Tin
Current Rating	--	-200 mA	100 mA	100 mA
Element Configuration	--	Dual	Dual	Single
Action	RFQ	RFQ	RFQ	RFQ

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