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onsemi 2SA2016-TD-E BJTs

Bipolar Transistor, -50V, -7A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL

183 ActiveonsemiTO-243AA$1.93
2SA2016-TD-E - No Image Available

Same model may have multiple batches, images only for reference.

2SA2016-TD-E
Manufacturer
Part Number (MPN)
2SA2016-TD-E
Detailed Description
Bipolar Transistor, -50V, -7A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL
Package
TO-243AA
Lifecycle Status
Active
Datasheet
PDF 2SA2016-TD-E Datasheet
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Technical Specifications

onsemi 2SA2016-TD-E BJTs technical specifications.

General

Package / Case
TO-243AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 50V 7A PCP
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W Surface Mount PCP
Dc Current Gain Hfe Min IC Vce
200 @ 500mA, 2V
Power Max
3.5 W
Frequency Transition
330MHz
Transistor Type
PNP

Alternate Parts Comparison (2SA2016-TD-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--40 V50 V50 V
Collector Emitter Breakdown Voltage--40 V45 V45 V
Collector Emitter Saturation Voltage---400 mV600 mV600 mV
Collector Emitter Voltage Vceo--40 V45 V45 V
Contact Plating--TinTinTin
Current Rating---200 mA100 mA100 mA
Element Configuration--DualDualSingle
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