onsemi 2SD1620-TD-E BJTs

Name: 2SD1620-TD-E
Brand: onsemi
SKU: 2SD1620-TD-E
Price: 0.8059 USD
Availability: InStock

Bipolar Transistor, 10V, 3A, Low VCE(sat), NPN Single PCP, SOT-89 / PCP-1, 1000-REEL

422 ActiveonsemiTO-243AA$0.81

Same model may have multiple batches, images only for reference.

2SD1620-TD-E

Manufacturer

onsemi

Part Number (MPN)

2SD1620-TD-E

Technical Specifications

onsemi 2SD1620-TD-E BJTs technical specifications.

General

Package / Case

TO-243AA

Mounting Type

Surface Mount

Operating Temperature

150°C (TJ)

Lifecycle Status

Active

Dc Current Gain Hfe Min IC Vce

140 @ 3A, 2V

Power Max

500 mW

Frequency Transition

200MHz

Transistor Type

NPN

Current Collector IC Max

3 A

Voltage Collector Emitter Breakdown Max

10 V

Alternate Parts Comparison (2SD1620-TD-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemi2SD1620-TD-E	onsemiMBT3906DW1T1G	onsemiBC847CDW1T1G	onsemiBC847CLT1G
Package / Case	TO-243AA	6-TSSOP	6-TSSOP	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Lifecycle Status	Active	Production	Production	Production
Current Collector IC Max	3 A	200mA	100mA	100 mA
Dc Current Gain Hfe Min IC Vce	140 @ 3A, 2V	100 @ 10mA, 1V	420 @ 2mA, 5V	420 @ 2mA, 5V
Power Max	500 mW	150mW	380mW	300 mW
Transistor Type	NPN	2 PNP (Dual)	2 NPN (Dual)	NPN
Vce Saturation Max Ib IC	400mV @ 60mA, 3A	400mV @ 5mA, 50mA	600mV @ 5mA, 100mA	600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max	10 V	40V	45V	45 V
Current Collector Cutoff Max	100nA (ICBO)	--	15nA (ICBO)	15nA (ICBO)
Number of Pins	--	6	6	3
Action	RFQ	RFQ	RFQ	RFQ

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