onsemi 2N5550TFR BJTs
SMALL SIGNAL BIPOLAR TRANSISTOR,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N5550TFR
Base Model
Detailed Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
2N5550TFR Datasheet
Quick Jump:
Technical Specifications
onsemi 2N5550TFR BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 140V 0.6A TO-92-3
Detailed Description
Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
60 @ 10mA, 5V
Power Max
625 mW
Frequency Transition
300MHz
Transistor Type
NPN
Alternate Parts Comparison (2N5550TFR vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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