Nexperia PSMN8R3-40YS MOSFETs
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 70A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN8R3-40YS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN8R3-40YS vs PSMN8R3-40YS,115 vs PSMN8R3-40YS,115 vs PSMN1R8-40YLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 5 | -- | -- | 5 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single Triple Source | -- | -- | Single Triple Source |
| Jedec | MO-235 | -- | -- | MO-235 |
| Action |
Nexperia PSMN8R3-40YS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 70A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a 5-pin LFPAK surface-mount package (MO-235) with a low profile of 1.1mm maximum height. It offers a low drain-source on-resistance of 8.6 mOhm at 10V Vgs and a maximum power dissipation of 74W, operating across a wide temperature range from -55°C to 175°C.
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