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Nexperia PSMN8R3-40YS MOSFETs

N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 70A continuous drain current.

In Stock ActiveNexperiaPSMN8R3LFPAKRoHS
PSMN8R3-40YS LFPAK package illustration

Same model may have multiple batches, images only for reference.

PSMN8R3-40YS
Manufacturer
Nexperia
Part Number (MPN)
PSMN8R3-40YS
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
PSMN8R3
Detailed Description
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 70A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a 5-pin LFPAK surface-mount package (MO-235) with a low profile of 1.1mm maximum height. It offers a low drain-source on-resistance of 8.6 mOhm at 10V Vgs and a maximum power dissipation of 74W, operating across a wide temperature range from -55°C to 175°C.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN8R3-40YS Datasheet
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Ordering Code Family

PSMN8R3 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN8R3-40YS MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Package Height Mm
1.1(Max)

Alternate Parts Comparison (PSMN8R3-40YS vs PSMN8R3-40YS,115 vs PSMN8R3-40YS,115 vs PSMN1R8-40YLC,115)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
NexperiaPSMN8R3-40YS
NXP SemiconductorsPSMN8R3-40YS,115
NexperiaPSMN8R3-40YS,115
NexperiaPSMN1R8-40YLC,115
Mounting TypeSurface MountSMD/SMTSMD/SMTSurface Mount
Operating Temperature-55°C ~ 175°C- 55°C ~ + 175°C- 55°C ~ + 175°C-55°C ~ 175°C
RoHSYes with ExemptionYesYesYes with Exemption
Channel ModeEnhancementEnhancementEnhancementEnhancement
PackageLFPAKSOT669-5SOT669-5LFPAK
Action
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Nexperia PSMN8R3-40YS MOSFETs Overview

N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 70A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a 5-pin LFPAK surface-mount package (MO-235) with a low profile of 1.1mm maximum height. It offers a low drain-source on-resistance of 8.6 mOhm at 10V Vgs and a maximum power dissipation of 74W, operating across a wide temperature range from -55°C to 175°C.

More Parts in MOSFETs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN8R3-40YS,115PSMN8R3-40YS,115NXP Semiconductors
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET / Trans MOSFET N-CH 40V 70A 5-Pin(4+Tab) LFPAK
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PSMN8R3-40YS,115PSMN8R3-40YS,115Nexperia
PSMN8R3-40YS - N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET SOIC 4-Pin
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PSMN1R8-40YLC,115PSMN1R8-40YLC,115Nexperia
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current.
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PSMN026-80YS,115PSMN026-80YS,115Nexperia
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package (JEDEC MO-235).
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