NXP Semiconductors PMGD8000LN MOSFETs
Dual UTrenchMOS logic level FET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMGD8000LN
Detailed Description
Dual UTrenchMOS logic level FET
Package
SOT-363
Lifecycle Status
Active
Datasheet
PMGD8000LN Datasheet
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Technical Specifications
NXP Semiconductors PMGD8000LN MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
6
Package / Case
SOT-363
Operating Temperature
-55 °C ~ 150 °C
Continuous Drain Current ID
125 mA
Drain to Source Voltage Vdss
30 V
Dual Supply Voltage
30 V
Element Configuration
Dual
Max Power Dissipation
200 mW
Nominal Vgs
1.5 V
Alternate Parts Comparison (PMGD8000LN vs PMGD290XN,115 vs PMGD280UN vs PMGD290XN)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Threshold Voltage | 1.5 V | 500 mV | -- | -- |
| Package / Case | SOT-363 | -- | -- | -- |
| Operating Temperature | -55 °C ~ 150 °C | -- | -- | -- |
| Resistance | 8O | -- | -- | -- |
| Number of Pins | 6 | -- | -- | -- |
| Continuous Drain Current ID | 125 mA | -- | -- | -- |
| Drain to Source Voltage Vdss | 30 V | -- | -- | -- |
| Dual Supply Voltage | 30 V | -- | -- | -- |
| Element Configuration | Dual | -- | -- | -- |
| Max Power Dissipation | 200 mW | -- | -- | -- |
| Nominal Vgs | 1.5 V | -- | -- | -- |
| Action |
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