NXP Semiconductors PMGD290XN,115 MOSFETs
Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMGD290XN,115
Base Model
Detailed Description
Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R
Package
6-TSSOP
Lifecycle Status
Active
Datasheet
PMGD290XN,115 Datasheet
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Technical Specifications
NXP Semiconductors PMGD290XN,115 MOSFETs technical specifications.
General
RoHS
True
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
860 mA
Rds on Drain Source Resistance
350 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Threshold Voltage
500 mV
Alternate Parts Comparison (PMGD290XN,115 vs PMGD290XN vs PMGD8000LN vs PMGD780SN,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | -- | Surface Mount |
| RoHS | True | True | Compliant | Non-Compliant |
| Package | 6-TSSOP | TSSOP-6 | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| ID Continuous Drain Current | 860 mA | -- | -- | -- |
| Maximum Operating Temperature C | + 150 | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Pd Power Dissipation | 410 mW | -- | -- | -- |
| Qg Gate Charge | 720 pC | -- | -- | -- |
| Rds on Drain Source Resistance | 350 mOhms | -- | -- | -- |
| Technology | Si | -- | -- | MOSFET (Metal Oxide) |
| Action |
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