NXP Semiconductors PBSS306PX,115 BJTs
100 V, 3.7 A PNP low VCEsat (BISS) transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PBSS306PX,115
Detailed Description
100 V, 3.7 A PNP low VCEsat (BISS) transistor
Package
SOT-89-3
Lifecycle Status
Active
Datasheet
PBSS306PX,115 Datasheet
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Technical Specifications
NXP Semiconductors PBSS306PX,115 BJTs technical specifications.
General
RoHS
Yes
Type Number
PBSS306PX
Size Mm
4.5 x 2.5 x 1.5
Polarity
PNP
Ptot Mw
600
Vceo Max V
-100
IC Max Ma
-3700
Hfe Min
200
Packing
SOT89_115
Chemical Content
PBSS306PX
Alternate Parts Comparison (PBSS306PX,115 vs PBSS5540X,135 vs PBSS303NX,115 vs PBSS4041PX,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-89-3 | SOT-89 | SOT-89 | SOT-89 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 65°C ~ + 150°C | - 65°C ~ + 150°C | - 55°C ~ + 150°C |
| Collector Base Voltage Vcbo | -- | 40 V | 30 V | 60 V |
| Collector Emitter Saturation Voltage | -- | 375 mV | 150 mV | 200 mV |
| Collector Emitter Voltage Vceo Max | -- | 40 V | 30 V | 60 V |
| Configuration | -- | Single | Single | Single |
| Dc Collector Base Gain Hfe Min | -- | 250 | 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 250 at 2 A, 2 V, 200 at 4 A, 2 V, 180 at 6 A, 2 V | 200 |
| Emitter Base Voltage Vebo | -- | 6 V | 5 V | 5 V |
| Gain Bandwidth Product Ft | -- | 60 MHz | 130 MHz | 110 MHz |
| Maximum Dc Collector Current | -- | 4 A | 5.1 A | 5 A |
| Action |
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