NXP Semiconductors BST52TA BJTs
TRANS NPN DARL 80V 1A SOT89
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BST52TA
Detailed Description
TRANS NPN DARL 80V 1A SOT89
Package
SOT-89
Lifecycle Status
Active
Datasheet
BST52TA Datasheet
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Technical Specifications
NXP Semiconductors BST52TA BJTs technical specifications.
General
Series
BST52
RoHS
Compliant
Number of Pins
4
Package / Case
TO-243AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Collector Base Voltage Vcbo
90 V
Collector Emitter Breakdown Voltage
80 V
Related Parts Comparison (BST52TA vs PBSS5540X,135 vs BF623,115 vs PXTA42,115)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) | - 65°C ~ + 150°C | - 65°C ~ + 150°C | - 65°C ~ + 150°C |
| RoHS | Compliant | Yes | Yes | Yes |
| Collector Base Voltage Vcbo | 90 V | 40 V | 250 V | 300 V |
| Collector Emitter Saturation Voltage | 1.3 V | 375 mV | 800 mV | 500 mV |
| Collector Emitter Voltage Vceo Max | 80 V | 40 V | 250 V | 300 V |
| Configuration | Single | Single | Single | Single |
| Dc Collector Base Gain Hfe Min | 1000 at 150 mA at 10 V, 2000 at 500 mA at 10 V | 250 | 50 at 25 mA, 20 V | 25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 40 at 30 mA, 10 V |
| Dc Current Gain Hfe Max | 1000 | 250 at 500 mA, 2 V | 50 at 25 mA, 20 V | 25 at 1 mA, 10 V |
| Emitter Base Voltage Vebo | 10 V | 6 V | 5 V | 6 V |
| Maximum Dc Collector Current | 500 mA | 4 A | 50 mA | 100 mA |
| Pd Power Dissipation | 1 W | 2.5 W | 1.1 W | 1.3 W |
| Action |
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