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NXP Semiconductors BC869,115 BJTs

Trans GP BJT PNP 20V 2A 1350mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R

40 ActiveNXP SemiconductorsBC869SOT-89-3$0.32
BC869,115 SOT-89-3 package illustration

Same model may have multiple batches, images only for reference.

BC869,115
Manufacturer
Part Number (MPN)
BC869,115
Base Model
Detailed Description
Trans GP BJT PNP 20V 2A 1350mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
Package
SOT-89-3
Lifecycle Status
Active
Datasheet
PDF BC869,115 Datasheet
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Ordering Code Family

BC869 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

NXP Semiconductors BC869,115 BJTs technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
PNP
Configuration
Single
Collector Emitter Voltage Vceo Max
20 V
Collector Base Voltage Vcbo
32 V
Emitter Base Voltage Vebo
5 V
Collector Emitter Saturation Voltage
600 mV
Maximum Dc Collector Current
2 A

Related Parts Comparison (BC869,115 vs BC869-25 vs BC857AW,115 vs BST50,115)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYes--YesYes
PackageSOT-89-3--SOT-323SOT-89-3
Mounting TypeSMD/SMT--SMD/SMT--
Operating Temperature- 55°C ~ + 150°C--- 65°C ~ + 150°C--
Collector Base Voltage Vcbo32 V--50 V--
Collector Emitter Saturation Voltage600 mV--650 mV--
Collector Emitter Voltage Vceo Max20 V--45 V--
ConfigurationSingle--Single--
Continuous Collector Current- 1 A--- 100 mA--
Dc Collector Base Gain Hfe Min85--125--
Dc Current Gain Hfe Max50 at 5 mA, 10 V--125 at 2 mA, 5 V--
Emitter Base Voltage Vebo5 V--5 V--
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