NXP Semiconductors PBSS303NX,115 BJTs
30 V, 5.1 A NPN low VCEsat (BISS) transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PBSS303NX,115
Detailed Description
30 V, 5.1 A NPN low VCEsat (BISS) transistor
Package
SOT-89
Lifecycle Status
Active
Datasheet
PBSS303NX,115 Datasheet
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Technical Specifications
NXP Semiconductors PBSS303NX,115 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
30 V
Collector Base Voltage Vcbo
30 V
Emitter Base Voltage Vebo
5 V
Collector Emitter Saturation Voltage
150 mV
Maximum Dc Collector Current
5.1 A
Alternate Parts Comparison (PBSS303NX,115 vs PBSS302PX,115 vs PBSS304PX vs PBSS4041PX,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-89 | SOT-89-3 | SOT-89 | SOT-89 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Operating Temperature | - 65°C ~ + 150°C | -- | -- | - 55°C ~ + 150°C |
| Collector Base Voltage Vcbo | 30 V | -- | -- | 60 V |
| Collector Emitter Saturation Voltage | 150 mV | -- | -- | 200 mV |
| Collector Emitter Voltage Vceo Max | 30 V | -- | -- | 60 V |
| Configuration | Single | -- | -- | Single |
| Dc Collector Base Gain Hfe Min | 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 250 at 2 A, 2 V, 200 at 4 A, 2 V, 180 at 6 A, 2 V | -- | -- | 200 |
| Emitter Base Voltage Vebo | 5 V | -- | -- | 5 V |
| Gain Bandwidth Product Ft | 130 MHz | -- | -- | 110 MHz |
| Maximum Dc Collector Current | 5.1 A | -- | -- | 5 A |
| Action |
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