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NXP Semiconductors PBRP113ET,215 BJTs

PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW

1,415 ActiveNXP SemiconductorsTO-236AB$0.25
PBRP113ET,215 TO-236AB package illustration

Same model may have multiple batches, images only for reference.

PBRP113ET,215
Manufacturer
Part Number (MPN)
PBRP113ET,215
Detailed Description
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
Package
TO-236AB
Lifecycle Status
Active
Datasheet
PDF PBRP113ET,215 Datasheet
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Technical Specifications

NXP Semiconductors PBRP113ET,215 BJTs technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
1 kOhms
Typical Resistor Ratio
1
Collector Emitter Voltage Vceo Max
40 V
Continuous Collector Current
600 mA
Peak Dc Collector Current
600 mA

Alternate Parts Comparison (PBRP113ET,215 vs PBRP113ZT,215 vs PBSS4140T,235 vs BC847AMB,315)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackageTO-236ABSOT23-3SOT23-3DFN1006B-3
Automotive Qualified--NNY
Chemical Content--PBRP113ZTPBSS4140TBC847AMB
Packing--SOT23_215SOT23_235SOT883B_315
Ptot Mw--250300250
Size Mm--2.9 x 1.3 x 12.9 x 1.3 x 11 x 0.6 x 0.37
Type Number--PBRP113ZTPBSS4140TBC847AMB
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