NXP Semiconductors PBRN113ET,215 BJTs
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PBRN113ET,215
Detailed Description
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
Package
TO-236AB
Lifecycle Status
Active
Datasheet
PBRN113ET,215 Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors PBRN113ET,215 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
1 kOhms
Typical Resistor Ratio
1
Collector Emitter Voltage Vceo Max
40 V
Continuous Collector Current
700 mA
Peak Dc Collector Current
700 mA
Alternate Parts Comparison (PBRN113ET,215 vs PBSS4140T,235 vs BC847AMB,315 vs 2PB709ART,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-236AB | SOT23-3 | DFN1006B-3 | SOT23-3 |
| Automotive Qualified | -- | N | Y | Y |
| Chemical Content | -- | PBSS4140T | BC847AMB | 2PB709ART |
| Ft Min Mhz | -- | 150 | 100 | 70 |
| Hfe Max | -- | 900 | 220 | 340 |
| Hfe Min | -- | 300 | 110 | 210 |
| IC Max Ma | -- | 1000 | 100 | -100 |
| Packing | -- | SOT23_235 | SOT883B_315 | SOT23_215 |
| Polarity | -- | NPN | NPN | PNP |
| Ptot Mw | -- | 300 | 250 | 250 |
| Size Mm | -- | 2.9 x 1.3 x 1 | 1 x 0.6 x 0.37 | 2.9 x 1.3 x 1 |
| Action |
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