NXP Semiconductors BF823,215 BJTs
PNP high-voltage transistors
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BF823,215
Detailed Description
PNP high-voltage transistors
Package
TO-236AB
Lifecycle Status
Active
Datasheet
BF823,215 Datasheet
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Technical Specifications
NXP Semiconductors BF823,215 BJTs technical specifications.
General
RoHS
True
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Polarity
PNP
Configuration
Single
Collector Emitter Voltage Vceo Max
250 V
Collector Base Voltage Vcbo
250 V
Emitter Base Voltage Vebo
5 V
Collector Emitter Saturation Voltage
800 mV
Maximum Dc Collector Current
50 mA
Alternate Parts Comparison (BF823,215 vs BFU530AR vs BFU550AR vs BFU520XVL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 65°C ~ + 150°C | -40 °C ~ 150 °C | -40 °C ~ 150 °C | -40°C ~ 150°C (TJ) |
| Gain | -- | 18 dB | 18 dB | 18dB |
| Number of Pins | -- | 3 | 3 | -- |
| Lifecycle Status | -- | Obsolete | Obsolete | Active |
| China ROHS | -- | Compliant | Compliant | -- |
| Collector Base Voltage Vcbo | 250 V | 24 V | 24 V | -- |
| Collector Emitter Breakdown Voltage | -- | 12 V | 12 V | -- |
| Collector Emitter Voltage Vceo | -- | 12 V | 16 V | -- |
| Contact Plating | -- | Tin | Tin | -- |
| Continuous Collector Current | -- | 10 mA | 15 mA | -- |
| Element Configuration | -- | Dual | Dual | -- |
| Action |
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