NXP Semiconductors BLT81,115 RF BJT
BLT81,115 by NXP Semiconductors · RF BJT · TO-261-4, TO-261AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BLT81,115
Package
TO-261-4, TO-261AA
Lifecycle Status
Obsolete
Datasheet
BLT81,115 Datasheet
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Technical Specifications
NXP Semiconductors BLT81,115 RF BJT technical specifications.
General
RoHS
ROHS3 Compliant
Number of Pins
3
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Supply Voltage
7.5 V
Lifecycle Status
Obsolete
Collector Base Voltage Vcbo
20 V
Collector Emitter Breakdown Voltage
9.5 V
Collector Emitter Voltage Vceo
9.5 V
Alternate Parts Comparison (BLT81,115 vs BLT70,115 vs BLT81 vs BLT80,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | ROHS3 Compliant | Yes | -- | Yes |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Package / Case | TO-261-4, TO-261AA | -- | Bulk | -- |
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | 175°C (TJ) | -- | -- | 175°C (TJ) |
| Current Collector IC Max | 500 mA | -- | -- | 250mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 300mA, 5V | -- | -- | 25 @ 150mA, 5V |
| Frequency Transition | 900 MHz | -- | -- | 900MHz |
| Power Max | 2 W | -- | -- | 2W |
| Transistor Type | NPN | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 9.5 V | -- | -- | 10V |
| Supply Voltage | 7.5 V | -- | -- | -- |
| Action |
More Parts in RF BJT
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