NXP Semiconductors BLT80,115 RF BJT
BLT80,115 by NXP Semiconductors · RF BJT · TO-261-4,TO-261AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BLT80,115
Package
TO-261-4,TO-261AA
Lifecycle Status
Obsolete
Datasheet
BLT80,115 Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors BLT80,115 RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
10V
Frequency Transition
900MHz
Power Max
2W
Dc Current Gain Hfe Min IC Vce
25 @ 150mA, 5V
Current Collector IC Max
250mA
Alternate Parts Comparison (BLT80,115 vs BLT81 vs BLT81,115 vs BLT50,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | 175°C (TJ) | -- | 175°C (TJ) | 175°C (TJ) |
| RoHS | Yes | -- | ROHS3 Compliant | ROHS3 Compliant |
| Current Collector IC Max | 250mA | -- | 500 mA | 500 mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 150mA, 5V | -- | 25 @ 300mA, 5V | 25 @ 300mA, 5V |
| Frequency Transition | 900MHz | -- | 900 MHz | 470 MHz |
| Power Max | 2W | -- | 2 W | 2 W |
| Transistor Type | NPN | -- | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 10V | -- | 9.5 V | 10 V |
| Package / Case | -- | Bulk | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Action |
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