NXP Semiconductors BLT50,115 RF BJT
BLT50,115 by NXP Semiconductors · RF BJT · TO-261-4, TO-261AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BLT50,115
Package
TO-261-4, TO-261AA
Lifecycle Status
Obsolete
Datasheet
BLT50,115 Datasheet
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Technical Specifications
NXP Semiconductors BLT50,115 RF BJT technical specifications.
General
RoHS
ROHS3 Compliant
Number of Pins
4
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Lifecycle Status
Obsolete
Collector Base Voltage Vcbo
20 V
Collector Emitter Breakdown Voltage
10 V
Collector Emitter Voltage Vceo
10 V
Contact Plating
Tin
Alternate Parts Comparison (BLT50,115 vs BLT70,115 vs BLT81 vs BLT80,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | ROHS3 Compliant | Yes | -- | Yes |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Package / Case | TO-261-4, TO-261AA | -- | Bulk | -- |
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | 175°C (TJ) | -- | -- | 175°C (TJ) |
| Current Collector IC Max | 500 mA | -- | -- | 250mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 300mA, 5V | -- | -- | 25 @ 150mA, 5V |
| Frequency Transition | 470 MHz | -- | -- | 900MHz |
| Power Max | 2 W | -- | -- | 2W |
| Transistor Type | NPN | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 10 V | -- | -- | 10V |
| Number of Pins | 4 | -- | -- | -- |
| Action |
More Parts in RF BJT
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