NXP Semiconductors BFG541,115 RF BJT
BFG541,115 by NXP Semiconductors · RF BJT · TO-261-4, TO-261AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFG541,115
Package
TO-261-4, TO-261AA
Lifecycle Status
Obsolete
Datasheet
BFG541,115 Datasheet
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Technical Specifications
NXP Semiconductors BFG541,115 RF BJT technical specifications.
General
RoHS
ROHS3 Compliant
Number of Pins
4
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Lifecycle Status
Obsolete
Automotive
No
Configuration
Single Dual Emitter
Current Collector IC Max
120 mA
Dc Current Gain Hfe Min IC Vce
60 @ 40mA, 8V
Alternate Parts Comparison (BFG541,115 vs BFG325W/XR,115 vs BFG35,115 vs BFG93A,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | SC-82A, SOT-343 | -- | -- |
| Mounting Type | Surface Mount | Surface Mount | -- | -- |
| Operating Temperature | 175°C (TJ) | 175°C (TJ) | -- | -- |
| Base Part Number | -- | BFG325 | -- | -- |
| Current Collector IC Max | 120 mA | 35mA | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 60 @ 40mA, 8V | 60 @ 15mA, 3V | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Frequency Transition | 9 GHz | 14GHz | -- | -- |
| Gain | -- | 18.3dB | -- | -- |
| Noise Figure Db Typ F | 1.3dB ~ 2.4dB @ 900MHz | 1.1dB @ 2GHz | -- | -- |
| Other Names | -- | 568-1978-2 934057942115 BFG325W/XR T/R | -- | -- |
| Power Max | 650 mW | 210mW | -- | -- |
| Action |
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