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NTE Electronics, Inc. NTE319P RF BJT

NTE319P by NTE Electronics, Inc. · RF BJT · TO-226-3,TO-92-3(TO-226AA)

In Stock ActiveNTE Electronics, Inc.TO-226-3,TO-92-3(TO-226AA)
NTE319P TO-226-3,TO-92-3(TO-226AA) package illustration

Same model may have multiple batches, images only for reference.

NTE319P
Part Number (MPN)
NTE319P
Package
TO-226-3,TO-92-3(TO-226AA)
Lifecycle Status
Active
Datasheet
PDF NTE319P Datasheet
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Technical Specifications

NTE Electronics, Inc. NTE319P RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
20V
Frequency Transition
500MHz
Noise Figure Db Typ F
2.7dB @ 45MHz
Gain
29dB
Power Max
625mW

Related Parts Comparison (NTE319P vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)-40 ~ 1250 °C ~ 70 °C150°C (TJ)
RoHSYesCompliantCompliant--
PackageTO-226-3,TO-92-3(TO-226AA)DIPDIP--
Lifecycle StatusActiveObsolete----
Current Collector IC Max50mA----100mA
Dc Current Gain Hfe Min IC Vce20 @ 2mA, 10V----100 @ 10mA, 10V
Frequency Transition500MHz----70MHz
Power Max625mW----1.5W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max20V----300V
Gain29dB------
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