NTE Electronics, Inc. NTE319P RF BJT
NTE319P by NTE Electronics, Inc. · RF BJT · TO-226-3,TO-92-3(TO-226AA)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTE319P
Package
TO-226-3,TO-92-3(TO-226AA)
Lifecycle Status
Active
Datasheet
NTE319P Datasheet
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Technical Specifications
NTE Electronics, Inc. NTE319P RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
20V
Frequency Transition
500MHz
Noise Figure Db Typ F
2.7dB @ 45MHz
Gain
29dB
Power Max
625mW
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Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -40 ~ 125 | 0 °C ~ 70 °C | 150°C (TJ) |
| RoHS | Yes | Compliant | Compliant | -- |
| Package | TO-226-3,TO-92-3(TO-226AA) | DIP | DIP | -- |
| Lifecycle Status | Active | Obsolete | -- | -- |
| Current Collector IC Max | 50mA | -- | -- | 100mA |
| Dc Current Gain Hfe Min IC Vce | 20 @ 2mA, 10V | -- | -- | 100 @ 10mA, 10V |
| Frequency Transition | 500MHz | -- | -- | 70MHz |
| Power Max | 625mW | -- | -- | 1.5W |
| Transistor Type | NPN | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 20V | -- | -- | 300V |
| Gain | 29dB | -- | -- | -- |
| Action |
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