Skip to main content

NTE Electronics, Inc. NTE23 RF BJT

NTE23 by NTE Electronics, Inc. · RF BJT · TO-226-3,TO-92-3(TO-226AA)

In Stock ActiveNTE Electronics, Inc.TO-226-3,TO-92-3(TO-226AA)
NTE23 TO-226-3,TO-92-3(TO-226AA) package illustration

Same model may have multiple batches, images only for reference.

NTE23
Part Number (MPN)
NTE23
Package
TO-226-3,TO-92-3(TO-226AA)
Lifecycle Status
Active
Datasheet
PDF NTE23 Datasheet
Quick Jump:
Ready to order?In stock and ready to ship.
Competitive Pricing
Fast & Reliable Delivery
Quality Assured

Technical Specifications

NTE Electronics, Inc. NTE23 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
14V
Frequency Transition
2GHz
Noise Figure Db Typ F
3dB @ 500MHz
Gain
15dB
Power Max
250mW

Related Parts Comparison (NTE23 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)-40 ~ 1250 °C ~ 70 °C150°C (TJ)
RoHSYesCompliantCompliant--
PackageTO-226-3,TO-92-3(TO-226AA)DIPDIP--
Lifecycle StatusActiveObsolete----
Current Collector IC Max50mA----100mA
Dc Current Gain Hfe Min IC Vce25 @ 10mA, 10V----100 @ 10mA, 10V
Frequency Transition2GHz----70MHz
Power Max250mW----1.5W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max14V----300V
Gain15dB------
Action

More Parts in RF BJT

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.