NTE Electronics, Inc. NTE55 RF BJT
NTE55 by NTE Electronics, Inc. · RF BJT · TO-220
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTE55
Package
TO-220
Lifecycle Status
Active
Datasheet
NTE55 Datasheet
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Technical Specifications
NTE Electronics, Inc. NTE55 RF BJT technical specifications.
General
Package / Case
Bag
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
8 A
Dc Current Gain Hfe Min IC Vce
40 @ 2A, 2V
Frequency Transition
30 MHz
Power Max
2 W
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
150 V
Related Parts Comparison (NTE55 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | -40 ~ 125 | 0 °C ~ 70 °C | 150°C (TJ) |
| Package / Case | Bag | -- | -- | TO-225AA, TO-126-3 |
| Lifecycle Status | Active | Obsolete | -- | -- |
| Current Collector IC Max | 8 A | -- | -- | 100mA |
| Dc Current Gain Hfe Min IC Vce | 40 @ 2A, 2V | -- | -- | 100 @ 10mA, 10V |
| Frequency Transition | 30 MHz | -- | -- | 70MHz |
| Power Max | 2 W | -- | -- | 1.5W |
| Transistor Type | PNP | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 150 V | -- | -- | 300V |
| Memory Size | -- | 256K | 1 MB | -- |
| Number of Pins | -- | 28 | 28 | -- |
| Action |
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