NTE Electronics, Inc. NTE65 RF BJT
NTE65 by NTE Electronics, Inc. · RF BJT · 3-SMD
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTE65
Package
3-SMD
Lifecycle Status
Active
Datasheet
NTE65 Datasheet
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Technical Specifications
NTE Electronics, Inc. NTE65 RF BJT technical specifications.
General
Package / Case
Bag
Mounting Type
Surface Mount
Lifecycle Status
Active
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
25 @ 14mA, 10V
Frequency Transition
5 GHz
Gain
18dB
Noise Figure Db Typ F
2.4dB ~ 3dB @ 500MHz ~ 1GHz
Power Max
180 mW
Transistor Type
NPN
Alternate Parts Comparison (NTE65 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Package / Case | Bag | -- | -- | TO-225AA, TO-126-3 |
| Lifecycle Status | Active | Obsolete | -- | -- |
| Current Collector IC Max | 30 mA | -- | -- | 100mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 14mA, 10V | -- | -- | 100 @ 10mA, 10V |
| Frequency Transition | 5 GHz | -- | -- | 70MHz |
| Power Max | 180 mW | -- | -- | 1.5W |
| Transistor Type | NPN | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 15 V | -- | -- | 300V |
| Gain | 18dB | -- | -- | -- |
| Noise Figure Db Typ F | 2.4dB ~ 3dB @ 500MHz ~ 1GHz | -- | -- | -- |
| Operating Temperature | -- | -40 ~ 125 | 0 °C ~ 70 °C | 150°C (TJ) |
| Action |
More Parts in RF BJT
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