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NTE Electronics, Inc. NTE108-1 RF BJT

NTE108-1 by NTE Electronics, Inc. · RF BJT · TO-106-3 Domed

In Stock ActiveNTE Electronics, Inc.TO-106-3 Domed
NTE108-1 TO-106-3 Domed package illustration

Same model may have multiple batches, images only for reference.

NTE108-1
Part Number (MPN)
NTE108-1
Package
TO-106-3 Domed
Lifecycle Status
Active
Datasheet
PDF NTE108-1 Datasheet
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Technical Specifications

NTE Electronics, Inc. NTE108-1 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
600MHz
Noise Figure Db Typ F
6dB @ 60MHz
Gain
15dB
Power Max
625mW

Related Parts Comparison (NTE108-1 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-40 ~ 1250 °C ~ 70 °C150°C (TJ)
RoHSYesCompliantCompliant--
PackageTO-106-3 DomedDIPDIP--
Lifecycle StatusActiveObsolete----
Current Collector IC Max50mA----100mA
Dc Current Gain Hfe Min IC Vce20 @ 8mA, 10V----100 @ 10mA, 10V
Frequency Transition600MHz----70MHz
Power Max625mW----1.5W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max15V----300V
Gain15dB------
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