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NTE Electronics, Inc. NTE69 RF BJT

NTE69 by NTE Electronics, Inc. · RF BJT · TO-92

In Stock ActiveNTE Electronics, Inc.TO-92
NTE69 TO-92 package illustration

Same model may have multiple batches, images only for reference.

NTE69
Part Number (MPN)
NTE69
Package
TO-92
Lifecycle Status
Active
Datasheet
PDF NTE69 Datasheet
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Technical Specifications

NTE Electronics, Inc. NTE69 RF BJT technical specifications.

General

Package / Case
Bag
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
25 @ 4mA, 4V
Frequency Transition
1.1 GHz
Power Max
350 mW
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25 V

Related Parts Comparison (NTE69 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-40 ~ 1250 °C ~ 70 °C150°C (TJ)
Package / CaseBag----TO-225AA, TO-126-3
Lifecycle StatusActiveObsolete----
Current Collector IC Max50 mA----100mA
Dc Current Gain Hfe Min IC Vce25 @ 4mA, 4V----100 @ 10mA, 10V
Frequency Transition1.1 GHz----70MHz
Power Max350 mW----1.5W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max25 V----300V
Memory Size--256K1 MB--
Number of Pins--2828--
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