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NTE Electronics, Inc. NTE108 RF BJT

NTE108 by NTE Electronics, Inc. · RF BJT

In Stock ActiveNTE Electronics, Inc.
NTE108 package illustration

Same model may have multiple batches, images only for reference.

NTE108
Part Number (MPN)
NTE108
Lifecycle Status
Active
Datasheet
PDF NTE108 Datasheet
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Technical Specifications

NTE Electronics, Inc. NTE108 RF BJT technical specifications.

General

Package / Case
Bag
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
20 @ 8mA, 10V
Frequency Transition
600 MHz
Gain
15dB
Noise Figure Db Typ F
6dB @ 60MHz
Power Max
625 mW

Related Parts Comparison (NTE108 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-40 ~ 1250 °C ~ 70 °C150°C (TJ)
Package / CaseBag----TO-225AA, TO-126-3
Lifecycle StatusActiveObsolete----
Current Collector IC Max50 mA----100mA
Dc Current Gain Hfe Min IC Vce20 @ 8mA, 10V----100 @ 10mA, 10V
Frequency Transition600 MHz----70MHz
Power Max625 mW----1.5W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max15 V----300V
Gain15dB------
Noise Figure Db Typ F6dB @ 60MHz------
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