Nexperia PSMN016-100YS MOSFETs
N-channel Power MOSFET, single element, enhancement mode, TMOS process technology.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN016-100YS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN016-100YS vs PSMN016-100BS,118 vs PSMN026-80YS,115 vs PSMN012-100YS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 5 | -- | 5 | 5 |
| RoHS | Yes with Exemption | -- | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single Triple Source | -- | Single Triple Source | Single Triple Source |
| Jedec | MO-235 | -- | MO-235 | MO-235 |
| Action |
Nexperia PSMN016-100YS MOSFETs Overview
N-channel Power MOSFET, single element, enhancement mode, TMOS process technology. Features 100V maximum drain-source voltage and 51A maximum continuous drain current. Operates with a 20V maximum gate-source voltage and exhibits 16.3 mOhm maximum drain-source resistance at 10V. Packaged in a 5-pin (4+Tab) LFPAK (MO-235) for surface mounting, with dimensions of 5mm (L) x 4.1mm (W) x 1.1mm (H).
Offers a wide operating temperature range from -55°C to 175°C.
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PSMN016-100BS,118NexperiaPSMN1R8-40YLC,115NexperiaPSMN026-80YS,115NexperiaBUK7Y07-30BNexperia