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Nexperia PSMN4R6-100XS,127 MOSFETs

N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 70.4A continuous drain current.

In Stock ActiveNexperiaPSMN4R6TO-220FRoHS
PSMN4R6-100XS,127 TO-220F package illustration

Same model may have multiple batches, images only for reference.

PSMN4R6-100XS,127
Manufacturer
Nexperia
Part Number (MPN)
PSMN4R6-100XS,127
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
PSMN4R6
Detailed Description
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 70.4A continuous drain current. This single-element transistor is housed in a TO-220F package with a 3-pin configuration and tab, designed for through-hole mounting with a 2.54mm pin pitch. Key specifications include a maximum gate-source voltage of 20V, a low drain-source on-resistance of 4.6mOhm at 10V, and a maximum power dissipation of 63800mW. Operating temperature range spans from -55°C to 175°C.
Package
TO-220F
Key Features
Package: TO-220F
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF PSMN4R6-100XS,127 Datasheet
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Ordering Code Family

PSMN4R6 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN4R6-100XS,127 MOSFETs technical specifications.

General

RoHS
Yes
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220F
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.6(Max)
Package Height Mm
15.8(Max)

Related Parts Comparison (PSMN4R6-100XS,127 vs PSMN4R6-100XS vs PSMN026-80YS,115 vs PSMN012-100YS)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
NexperiaPSMN4R6-100XS,127
NexperiaPSMN4R6-100XS
NexperiaPSMN026-80YS,115
NexperiaPSMN012-100YS
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3355
AEC QualifiedNoNoNoNo
AutomotiveNoNoNoNo
Cage CodeH2HX9H2HX9H2HX9H2HX9
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingle Triple SourceSingle Triple Source
JedecTO-220-FTO-220-FMO-235MO-235
Maximum Continuous Drain Current70.4A70.4A34A60A
Maximum Drain Source Resistance4.6@10VmOhm4.6@10VmOhm27.5@10VmOhm12@10VmOhm
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Nexperia PSMN4R6-100XS,127 MOSFETs Overview

N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 70.4A continuous drain current. This single-element transistor is housed in a TO-220F package with a 3-pin configuration and tab, designed for through-hole mounting with a 2.54mm pin pitch. Key specifications include a maximum gate-source voltage of 20V, a low drain-source on-resistance of 4.6mOhm at 10V, and a maximum power dissipation of 63800mW.

Operating temperature range spans from -55°C to 175°C.

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