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Nexperia PSMN4R6-100XS MOSFETs

N-channel enhancement mode power MOSFET in a TO-220F package, featuring a 100V drain-source voltage and 70.4A continuous drain current.

In Stock ActiveNexperiaPSMN4R6TO-220F
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PSMN4R6-100XS
Manufacturer
Nexperia
Part Number (MPN)
PSMN4R6-100XS
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
PSMN4R6
Detailed Description
N-channel enhancement mode power MOSFET in a TO-220F package, featuring a 100V drain-source voltage and 70.4A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 4.6 mΩ at 10V Vgs. With a maximum power dissipation of 63.8W and a wide operating temperature range of -55°C to 175°C, it is suitable for through-hole mounting. Key electrical characteristics include a 20V gate-source voltage, 4V gate threshold voltage, 153nC typical gate charge, and 99...
Package
TO-220F
Key Features
Package: TO-220F
Lifecycle Status
Active
Datasheet
PDF PSMN4R6-100XS Datasheet
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Ordering Code Family

PSMN4R6 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN4R6-100XS MOSFETs technical specifications.

General

Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220F
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.6(Max)
Package Height Mm
15.8(Max)
Jedec
TO-220-F

Alternate Parts Comparison (PSMN4R6-100XS vs PSMN4R6-100XS,127 vs PSMN026-80YS,115 vs PSMN012-100YS)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
NexperiaPSMN4R6-100XS
NexperiaPSMN4R6-100XS,127
NexperiaPSMN026-80YS,115
NexperiaPSMN012-100YS
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3355
AEC QualifiedNoNoNoNo
AutomotiveNoNoNoNo
Cage CodeH2HX9H2HX9H2HX9H2HX9
CategoryPower MOSFETPower MOSFETPower MOSFETPower MOSFET
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingle Triple SourceSingle Triple Source
JedecTO-220-FTO-220-FMO-235MO-235
Maximum Continuous Drain Current70.4A70.4A34A60A
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Nexperia PSMN4R6-100XS MOSFETs Overview

N-channel enhancement mode power MOSFET in a TO-220F package, featuring a 100V drain-source voltage and 70.4A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 4.6 mΩ at 10V Vgs. With a maximum power dissipation of 63.8W and a wide operating temperature range of -55°C to 175°C, it is suitable for through-hole mounting.

Key electrical characteristics include a 20V gate-source voltage, 4V gate threshold voltage, 153nC typical gate charge, and 99...

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