Nexperia PSMN028-100YS MOSFETs
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN028-100YS
Base Model
Detailed Description
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package. Features 100V drain-source voltage, 42A continuous drain current, and low 27.5mΩ drain-source on-resistance at 10V Vgs. Utilizes TMOS process technology with a maximum power dissipation of 89000mW and an operating temperature range of -55°C to 175°C. Typical gate charge is 33nC at 10V, with input capacitance of 1634pF at 50V Vds.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN028-100YS Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN028-100YS MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Package Height Mm
1.1(Max)
Alternate Parts Comparison (PSMN028-100YS vs PSMN028-100YS,115 vs PSMN1R8-40YLC,115 vs PSMN016-100YS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 5 | -- | 5 | 5 |
| RoHS | Yes with Exemption | -- | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single Triple Source | -- | Single Triple Source | Single Triple Source |
| Jedec | MO-235 | -- | MO-235 | MO-235 |
| Action |
Nexperia PSMN028-100YS MOSFETs Overview
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package. Features 100V drain-source voltage, 42A continuous drain current, and low 27.5mΩ drain-source on-resistance at 10V Vgs. Utilizes TMOS process technology with a maximum power dissipation of 89000mW and an operating temperature range of -55°C to 175°C.
Typical gate charge is 33nC at 10V, with input capacitance of 1634pF at 50V Vds.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN028-100YS,115NexperiaPSMN028-100YS - N-channel LFPAK 100V 27.5 mΩ standard level MOSFET SOIC 4-Pin
PSMN1R8-40YLC,115NexperiaN-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current.
PSMN026-80YS,115NexperiaN-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package (JEDEC MO-235).
BUK7Y07-30BNexperiaN-channel Power MOSFET, surface mount, in LFPAK package (5-pin, 4+Tab) with MO-235 standard.