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Nexperia PSMN028-100YS MOSFETs

N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package.

In Stock ActiveNexperiaPSMN028LFPAKRoHS
PSMN028-100YS LFPAK package illustration

Same model may have multiple batches, images only for reference.

PSMN028-100YS
Manufacturer
Nexperia
Part Number (MPN)
PSMN028-100YS
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
PSMN028
Detailed Description
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package. Features 100V drain-source voltage, 42A continuous drain current, and low 27.5mΩ drain-source on-resistance at 10V Vgs. Utilizes TMOS process technology with a maximum power dissipation of 89000mW and an operating temperature range of -55°C to 175°C. Typical gate charge is 33nC at 10V, with input capacitance of 1634pF at 50V Vds.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN028-100YS Datasheet
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Ordering Code Family

PSMN028 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN028-100YS MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Package Height Mm
1.1(Max)

Related Parts Comparison (PSMN028-100YS vs PSMN028-100YS,115 vs PSMN1R8-40YLC,115 vs PSMN016-100YS)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
NexperiaPSMN028-100YS
NexperiaPSMN028-100YS,115
NexperiaPSMN1R8-40YLC,115
NexperiaPSMN016-100YS
Mounting TypeSurface MountSMD/SMTSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C- 55°C ~ + 175°C-55°C ~ 175°C-55°C ~ 175°C
RoHSYes with ExemptionYesYes with ExemptionYes with Exemption
Channel ModeEnhancementEnhancementEnhancementEnhancement
PackageLFPAKSOT669-5LFPAKLFPAK
Number of Pins5--55
AEC QualifiedNo--NoNo
AutomotiveNo--NoNo
Cage CodeH2HX9--H2HX9H2HX9
Channel TypeN--NN
ConfigurationSingle Triple Source--Single Triple SourceSingle Triple Source
JedecMO-235--MO-235MO-235
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Nexperia PSMN028-100YS MOSFETs Overview

N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package. Features 100V drain-source voltage, 42A continuous drain current, and low 27.5mΩ drain-source on-resistance at 10V Vgs. Utilizes TMOS process technology with a maximum power dissipation of 89000mW and an operating temperature range of -55°C to 175°C.

Typical gate charge is 33nC at 10V, with input capacitance of 1634pF at 50V Vds.

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