Nexperia PSMN026-80YS MOSFETs
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface-mount package (MO-235).
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN026-80YS
Base Model
Detailed Description
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface-mount package (MO-235). Features 80V drain-source voltage, 34A continuous drain current, and low 27.5mΩ drain-source resistance at 10V. Utilizes TMOS process technology with a maximum power dissipation of 74W and operates from -55°C to 175°C.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN026-80YS Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN026-80YS MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Package Height Mm
1.1(Max)
Alternate Parts Comparison (PSMN026-80YS vs PSMN026-80YS,115 vs PSMN1R8-40YLC,115 vs PSMN016-100YS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 5 | 5 | 5 | 5 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | No | No | No |
| Automotive | No | No | No | No |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single Triple Source | Single Triple Source | Single Triple Source | Single Triple Source |
| Jedec | MO-235 | MO-235 | MO-235 | MO-235 |
| Action |
Nexperia PSMN026-80YS MOSFETs Overview
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface-mount package (MO-235). Features 80V drain-source voltage, 34A continuous drain current, and low 27.5mΩ drain-source resistance at 10V. Utilizes TMOS process technology with a maximum power dissipation of 74W and operates from -55°C to 175°C.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN026-80YS,115NexperiaN-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package (JEDEC MO-235).
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