Nexperia PSMN009-100W,127 MOSFETs
N-channel silicon power MOSFET in a TO-247 package, featuring a maximum drain-source voltage of 100V and a continuous drain current of 100A.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN009-100W,127 MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN009-100W,127 vs PSMN1R8-40YLC,115 vs PSMN016-100YS vs PSMN1R8-40YLC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 5 | 5 | 5 |
| AEC Qualified | No | No | No | No |
| Automotive | No | No | No | No |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single Triple Source | Single Triple Source | Single Triple Source |
| Jedec | TO-247 | MO-235 | MO-235 | MO-235 |
| Maximum Continuous Drain Current | 100A | 100A | 51A | 100A |
| Action |
Nexperia PSMN009-100W,127 MOSFETs Overview
N-channel silicon power MOSFET in a TO-247 package, featuring a maximum drain-source voltage of 100V and a continuous drain current of 100A. This single-element enhancement mode transistor offers a low drain-source on-resistance of 9mΩ at 10V, with a typical gate charge of 214nC at 10V.
Designed for through-hole mounting, it boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C.
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