Nexperia BUK964R8-60E,118 MOSFETs
Automotive N-channel enhancement mode power MOSFET in a D2PAK surface-mount package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK964R8-60E,118
Base Model
Detailed Description
Automotive N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 60V drain-source voltage, 100A continuous drain current, and a low 4.4mOhm drain-source on-resistance at 10V. Designed with TMOS process technology, it offers a maximum gate-source voltage of 10V and a maximum power dissipation of 234W. Operating temperature range spans from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
BUK964R8-60E,118 Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK964R8-60E,118 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)
Alternate Parts Comparison (BUK964R8-60E,118 vs BUK964R2-60E vs BUK964R1-40E,118 vs BUK964R1-40E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Maximum Continuous Drain Current | 100A | 100A | 75A | 75A |
| Action |
Nexperia BUK964R8-60E,118 MOSFETs Overview
Automotive N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 60V drain-source voltage, 100A continuous drain current, and a low 4.4mOhm drain-source on-resistance at 10V. Designed with TMOS process technology, it offers a maximum gate-source voltage of 10V and a maximum power dissipation of 234W.
Operating temperature range spans from -55°C to 175°C.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
BUK964R1-40E,118NexperiaN-channel enhancement mode power MOSFET with a 40V drain-source voltage and 75A continuous drain current.
BUK964R2-60ENexperiaN-channel enhancement mode power MOSFET in a D2PAK surface-mount package, featuring a 60V drain-source voltage and 10…