Nexperia PSMN034-100BS,118 MOSFETs
N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN034-100BS,118 MOSFETs technical specifications.
General
Related Parts Comparison (PSMN034-100BS,118 vs PSMN4R5-40BS,118 vs BUK964R1-40E,118 vs BUK963R3-60E)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | No | Yes | Yes |
| Automotive | No | No | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Maximum Continuous Drain Current | 32A | 100A | 75A | 120A |
| Maximum Drain Source Resistance | 34.5@10VmOhm | 4.5@10VmOhm | 3.5@10VmOhm | 3@10VmOhm |
| Action |
Nexperia PSMN034-100BS,118 MOSFETs Overview
N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 34.5mΩ at 10V and a maximum power dissipation of 86W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C.
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