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Nexperia PSMN034-100BS,118 MOSFETs

N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current.

10,330 ActiveNexperiaD2PAK$4.35RoHS
PSMN034-100BS,118 - No Image Available

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PSMN034-100BS,118
Manufacturer
Part Number (MPN)
PSMN034-100BS,118
Detailed Description
N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 34.5mΩ at 10V and a maximum power dissipation of 86W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN034-100BS,118 Datasheet
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Technical Specifications

Nexperia PSMN034-100BS,118 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)

Alternate Parts Comparison (PSMN034-100BS,118 vs PSMN4R5-40BS,118 vs BUK964R1-40E,118 vs BUK963R3-60E)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3333
RoHSYes with ExemptionYes with ExemptionYes with ExemptionYes with Exemption
AEC QualifiedNoNoYesYes
AutomotiveNoNoYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
CategoryPower MOSFETPower MOSFETPower MOSFETPower MOSFET
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingleSingle
Maximum Continuous Drain Current32A100A75A120A
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Nexperia PSMN034-100BS,118 MOSFETs Overview

N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 34.5mΩ at 10V and a maximum power dissipation of 86W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C.

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