Nexperia PSMN034-100BS,118 MOSFETs
N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN034-100BS,118
Detailed Description
N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 34.5mΩ at 10V and a maximum power dissipation of 86W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN034-100BS,118 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN034-100BS,118 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)
Alternate Parts Comparison (PSMN034-100BS,118 vs PSMN4R5-40BS,118 vs BUK964R1-40E,118 vs BUK963R3-60E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | No | Yes | Yes |
| Automotive | No | No | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | -- | -- | -- | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Maximum Continuous Drain Current | 32A | 100A | 75A | 120A |
| Action |
Nexperia PSMN034-100BS,118 MOSFETs Overview
N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 100V drain-source voltage and 32A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 34.5mΩ at 10V and a maximum power dissipation of 86W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C.
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