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Nexperia BUK964R2-60E MOSFETs

N-channel enhancement mode power MOSFET in a D2PAK surface-mount package, featuring a 60V drain-source voltage and 100A continuous drain current.

In Stock ActiveNexperiaBUK964RD2PAKRoHS
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BUK964R2-60E
Manufacturer
Nexperia
Part Number (MPN)
BUK964R2-60E
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
BUK964R
Detailed Description
N-channel enhancement mode power MOSFET in a D2PAK surface-mount package, featuring a 60V drain-source voltage and 100A continuous drain current. This single-element device utilizes TMOS process technology and offers a low drain-source on-resistance of 3.9mΩ at 10V. With a maximum power dissipation of 263W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF BUK964R2-60E Datasheet
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Ordering Code Family

BUK964R groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

Nexperia BUK964R2-60E MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)

Alternate Parts Comparison (BUK964R2-60E vs BUK964R1-40E,118 vs BUK964R1-40E vs BUK964R2-60E,118)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
NexperiaBUK964R2-60E
NexperiaBUK964R1-40E,118
NexperiaBUK964R1-40E
NexperiaBUK964R2-60E,118
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3333
RoHSYes with ExemptionYes with ExemptionYes with ExemptionYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
CategoryPower MOSFETPower MOSFETPower MOSFETPower MOSFET
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingleSingle
Maximum Continuous Drain Current100A75A75A100A
Action
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Nexperia BUK964R2-60E MOSFETs Overview

N-channel enhancement mode power MOSFET in a D2PAK surface-mount package, featuring a 60V drain-source voltage and 100A continuous drain current. This single-element device utilizes TMOS process technology and offers a low drain-source on-resistance of 3.9mΩ at 10V. With a maximum power dissipation of 263W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications.

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