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Nexperia BUK964R1-40E MOSFETs

N-channel enhancement mode power MOSFET in a D2PAK surface-mount package.

In Stock ActiveNexperiaBUK964RD2PAKRoHS
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BUK964R1-40E
Manufacturer
Part Number (MPN)
BUK964R1-40E
Base Model
Detailed Description
N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a maximum drain-source voltage of 40V and a continuous drain current of 75A. Offers a low drain-source on-resistance of 3.5 mOhm at 10V gate-source voltage. Designed for automotive applications with a wide operating temperature range from -55°C to 175°C. This single-element transistor utilizes TMOS process technology.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF BUK964R1-40E Datasheet
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Ordering Code Family

BUK964R groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

Nexperia BUK964R1-40E MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)

Alternate Parts Comparison (BUK964R1-40E vs BUK964R2-60E vs BUK964R1-40E,118 vs BUK964R2-60E,118)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3333
RoHSYes with ExemptionYes with ExemptionYes with ExemptionYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
Category--------
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingleSingle
Maximum Continuous Drain Current75A100A75A100A
Action

Nexperia BUK964R1-40E MOSFETs Overview

N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a maximum drain-source voltage of 40V and a continuous drain current of 75A. Offers a low drain-source on-resistance of 3.5 mOhm at 10V gate-source voltage. Designed for automotive applications with a wide operating temperature range from -55°C to 175°C.

This single-element transistor utilizes TMOS process technology.

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