Microsemi UTV8100B RF BJT
UTV8100B by Microsemi · RF BJT · 55RT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
UTV8100B
Package
55RT
Lifecycle Status
Obsolete
Datasheet
UTV8100B Datasheet
Quick Jump:
Technical Specifications
Microsemi UTV8100B RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
15 A
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V
Frequency Transition
470MHz ~ 860MHz
Gain
8.5dB ~ 9.5dB
Power Max
290 W
Transistor Type
NPN
Alternate Parts Comparison (UTV8100B vs UTV040 vs UTV005 vs UTV010)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Bulk | Bulk | Bulk | Bulk |
| Mounting Type | Chassis Mount | Chassis, Stud Mount | Chassis, Stud Mount | Chassis, Stud Mount |
| Operating Temperature | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 15 A | 2.5 A | 750 mA | 1.25 A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 1A, 5V | 10 @ 500mA, 5V | 20 @ 100mA, 5V | 15 @ 200mA, 5V |
| Frequency Transition | 470MHz ~ 860MHz | 470MHz ~ 860MHz | 470MHz ~ 860MHz | 470MHz ~ 860MHz |
| Gain | 8.5dB ~ 9.5dB | 9dB | 11dB | 11.5dB |
| Power Max | 290 W | 25 W | 8 W | 15 W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 60 V | 25 V | 24 V | 24 V |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.