Microsemi MSC1350M RF BJT
MSC1350M by Microsemi · RF BJT · M218
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MSC1350M
Package
M218
Lifecycle Status
Obsolete
Datasheet
MSC1350M Datasheet
Quick Jump:
Technical Specifications
Microsemi MSC1350M RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
65V
Frequency Transition
1.025GHz ~ 1.15GHz
Gain
7dB ~ 7.1dB
Power Max
720W
Dc Current Gain Hfe Min IC Vce
15 @ 1A, 5V
Alternate Parts Comparison (MSC1350M vs MSC80205 vs MSC80806 vs MSC72111H)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Mounting Type | Chassis Mount | -- | -- | -- |
| Operating Temperature | 200°C (TJ) | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Current Collector IC Max | 19.8A | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 15 @ 1A, 5V | -- | -- | -- |
| Frequency Transition | 1.025GHz ~ 1.15GHz | -- | -- | -- |
| Gain | 7dB ~ 7.1dB | -- | -- | -- |
| Package | M218 | -- | -- | -- |
| Power Max | 720W | -- | -- | -- |
| Transistor Type | NPN | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 65V | -- | -- | -- |
| Action |
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