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Microsemi MS2214 RF BJT

MS2214 by Microsemi · RF BJT · M218

In StockMicrosemiM218
MS2214 M218 package illustration

Same model may have multiple batches, images only for reference.

MS2214
Manufacturer
Part Number (MPN)
MS2214
Package
M218
Lifecycle Status
Obsolete
Datasheet
PDF MS2214 Datasheet
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Technical Specifications

Microsemi MS2214 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Chassis Mount
Operating Temperature
250°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
55V
Frequency Transition
960MHz ~ 1.215GHz
Gain
7.5dB
Power Max
300W
Dc Current Gain Hfe Min IC Vce
20 @ 2A, 5V

Alternate Parts Comparison (MS2214 vs MS2201 vs MS1001 vs MS2203)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature250°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
RoHSYesYesYesYes
Current Collector IC Max8A250mA20A300mA
Dc Current Gain Hfe Min IC Vce20 @ 2A, 5V0.95 @ 10mA, 5V20 @ 5A, 5V120 @ 100mA, 5V
Frequency Transition960MHz ~ 1.215GHz1.025GHz ~ 1.15GHz30MHz1.09GHz
Gain7.5dB9dB13dB10.8dB ~ 12.3dB
Power Max300W10W270W5W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max55V45V18V20V
Package / Case--M220M174M220
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