Microsemi MS1008 RF BJT
MS1008 by Microsemi · RF BJT · M164
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MS1008
Package
M164
Lifecycle Status
Obsolete
Datasheet
MS1008 Datasheet
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Technical Specifications
Microsemi MS1008 RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
10 A
Dc Current Gain Hfe Min IC Vce
15 @ 1.4A, 6V
Frequency Transition
30 MHz
Gain
14dB
Power Max
233 W
Transistor Type
NPN
Alternate Parts Comparison (MS1008 vs MS2201 vs MS1001 vs MS2203)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Bulk | M220 | M174 | M220 |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Operating Temperature | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) |
| Current Collector IC Max | 10 A | 250mA | 20A | 300mA |
| Dc Current Gain Hfe Min IC Vce | 15 @ 1.4A, 6V | 0.95 @ 10mA, 5V | 20 @ 5A, 5V | 120 @ 100mA, 5V |
| Frequency Transition | 30 MHz | 1.025GHz ~ 1.15GHz | 30MHz | 1.09GHz |
| Gain | 14dB | 9dB | 13dB | 10.8dB ~ 12.3dB |
| Power Max | 233 W | 10W | 270W | 5W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 55 V | 45V | 18V | 20V |
| Action |
More Parts in RF BJT
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