Microsemi MRF581G RF BJT
MRF581G by Microsemi · RF BJT · Micro-X ceramic (84C)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MRF581G
Package
Micro-X ceramic (84C)
Lifecycle Status
Obsolete
Datasheet
MRF581G Datasheet
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Technical Specifications
Microsemi MRF581G RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
18V
Frequency Transition
5GHz
Noise Figure Db Typ F
3dB ~ 3.5dB @ 500MHz
Gain
13dB ~ 15.5dB
Power Max
1.25W
Related Parts Comparison (MRF581G vs MRF517 vs MRF555 vs MRF581A)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Surface Mount | SMD/SMT |
| Transistor Type | NPN | NPN | NPN | Bipolar |
| RoHS | Yes | Yes | -- | Yes |
| Current Collector IC Max | 200mA | 150mA | 500 mA | -- |
| Dc Current Gain Hfe Min IC Vce | 50 @ 50mA, 5V | 50 @ 60mA, 10V | 30 @ 250mA, 5V | -- |
| Gain | 13dB ~ 15.5dB | 9dB ~ 10dB | 11dB ~ 13dB | -- |
| Package | Micro-X ceramic (84C) | TO-205 | -- | Micro-X ceramic (84C) |
| Power Max | 1.25W | 2.5W | 3 W | -- |
| Voltage Collector Emitter Breakdown Max | 18V | 20V | 16 V | -- |
| Action |
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